全光纤脉冲压缩器的理论及实验研究

对色散位移光纤＋普通单模光纤构成的全光纤脉冲压缩器进行了理论分析，分析了压 缩效果与光纤参数及输入脉冲参数的关系；对不同中心波长和脉宽的主动锁模光纤激光器的 输出脉冲进行了压缩实验，均得到了近变换限Sech的压缩脉冲，实验结果与理论分析一致. 关键词： 全光纤脉冲压缩器 压缩因子 基座能量 主动谐波锁模光纤 激光器     

Preparation and properties of the biodegradable graded blend of poly(L‐lactic acid) and poly(ethylene oxide)

We prepared biodegradable poly(ethylene oxide) (PEO)/poly(L ‐lactic acid) (PLLA) graded blends by the dissolution–diffusion process, and discussed the biodegradability and tensile strength of the graded blends by comparing isotropic blend and PLLA only. All the graded blends were degraded more largely than the PLLA only and isotropic blend (PEO: 37.5 wt %), which had the same content as the total content of those graded blends. The graded blend having most excellent wide compositional gradient was degraded most largely with the enzyme. Thus, graded structure of the blends promoted their biodegradabilities large. It was considered that the dissolution of PEO with water increased the surface area attacked by the enzyme, while PEO caught PLLA oligomers to promote the biodegradation of PLLA. Then, the biodegradabilities of the graded blends were suppressed by the increasing crystallinity of PLLA. Furthermore, the strengths of all the graded blends were larger than those of the isotropic blend. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 2972–2981, 2007     

Density-Functional Theory Calculations of Normal Modes and Raman Intensities for Tetraazaporphin

The structure, harmonic frequencies, and nonresonance Raman intensities for porphin, tetraazaporphin (TAP), and three of its isotopomers are calculated by the density-functional theory of B3LYP/6-31G(d). Scaling of force constants for porphin in nonredundant natural coordinates is performed. The scaling factors obtained were used to predict the force field and normal modes of TAP and three of its isotopomers. Two alternative methods are used to carry out reliable assignment of the TAP frequencies: wavenumber-linear scaling method and frequency-shift method. There is good agreement between the frequencies predicted within the framework of the three methods used. The conservativeness of the out-of-plane B _2g - and B _3g -modes for porphin and TAP is examined. The Raman spectrum for TAP is simulated. A refinement of the assignment of the experimental frequencies for TAP of even symmetry types on the basis of the calculations performed is made.     

Two-Frequency Brillouin Fiber Laser Based on Bragg Grating Fabry-Perot Cavity

A novel and simple two-frequency Brillouin fiber laser is presented. It is based on a fiber Fabry-Perot cavity with fiber Bragg gratings as reflectors. The model of stimulated Brillouin scattering in fiber grating-based Fabry-Perot resonator is investigated. The laser allows conversion efficiency of close to 100% and suppresses the higher-order Stokes waves. The theoretical prediction is presented and the experimental demonstration is realized.     

高能、超短脉冲、可调谐激光器用掺镱氟磷酸盐玻璃研究进展

Yb^3 与其它稀土离子相比有最简单的能级结构，这使它具有一些独特的性质，如避免激发态吸收，消除上转换和浓度猝灭等，因此它是高能输出激光器介质的理想掺杂离子。氟磷玻璃综合了氟化物玻璃和磷酸盐玻璃的优点，可降低磷酸盐的声子能量，改善其易吸湿性；提高氟化物玻璃的物理化学性能等，这使它成为稀土掺杂可调谐光纤激光器的很好的掺杂介质。众多研究表明，Yb^3 掺杂氟磷玻璃是一种很有前途的激光工作物质。本文总结了Yb^3 掺杂氟磷玻璃的特点，性质，结构及存在的问题。     

过渡金属表面γ-氨丙基三甲氧基硅烷膜的研究

本文对在过渡金属铁、镍电极表面制备得到的γ-氨丙基三甲氧基硅烷(γ-APS)膜进行了研究。实验中对硅烷膜用X-射线光电子能谱(XPS)、现场表面增强拉曼散射光谱(SERS)和原子力显微镜(AFM)进行了表征。X-射线光电子能谱(XPS)的结果发现存在两个N1s峰,表明γ-APS膜中的氨基有两种存在方式:自由氨基和质子化氨基。实验中还发现现场表面增强拉曼散射光谱(SERS)是研究金属/γ-APS体系中界面层结构非常有效的手段,SERS结果表明硅醇羟基和氨基发生了竞争吸附,且γ-APS分子在外加电位等条件的影响下吸附状态会发生一定变化。原子力显微镜(AFM)的表征结果在微观上显示电极表面的γ-APS膜上形成了一种较规则的微孔结构,这种结构可能与基底的性质有关。     

光纤传感振动检测系统及其实验研究

实际工程结构中的振动检测是十分重要的，也是十分复杂的，常用的结构振动检测传感器易受工程现场恶劣环境的影响．而光纤传感器具有小巧、抗电磁干扰、灵敏度高、适合长期监测等优点。本文建立了基于马赫—曾德(Mech-Zehnder)干涉原理的光纤传感振动检测系统．研制了运用先进的数字信号处理技术采集和处理数据的专用软件，并在典型结构件——钢制悬臂梁结构上进行了外加信号作用下的强迫振动检测和冲击载荷作用下的自由衰减振动检测，测量了该结构件的频率及振幅，其结果与同时进行的成熟的电测结果相近，说明光纤传感器用于结构件的振动测量是可靠的。本文为光纤传感器应用于实际工程的振动检测提供了新的技术装置，具有工程应用前景。     

Structural and vibrational properties of dilute GaNxAs1−x(P1−x)

We report a comprehensive analyzes of the Fourier transform infrared (FTIR) absorption and Raman scattering data on the structural and vibrational properties of dilute ternary GaAs_1−xN_x,[GaP_1−xN_x] (x<0.03) alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). By using realistic total energy and lattice dynamical calculations, the origin of experimentally observed N-induced vibrational features are characterized. Useful information is obtained about the structural stability, vibrational frequencies, lattice relaxations and compositional disorder in GaNAs (GaNP) alloys. At lower composition (x<0.015) most of the N atoms occupy the As [P] sublattice {N_As[N_P]}—they prefer moving out of their substitutional sites to more energetically favorable locations at higher x. Our results for the N-isotopic shifts of local mode frequencies compare favorably well with the existing FTIR data.     

Light Diffraction of Aligned Polymer Fibers Periodically Dispersed by Phase Separation of Liquid Crystal and Polymer

We have confirmed light diffraction of aligned polymer fibers obtained by a phase separation of an anisotropic-phase solution of liquid crystal and polymer. He—Ne laser light passing through the polymer fibers was scattered in the axis vertical to the fibers, and had two peaks of light intensity symmetrical to the center of the transmitting laser spot. The two peaks were found to be caused by light diffraction due to the periodic polymer-fiber dispersion because the peaks corresponded to values calculated by intervals between the fibers. The periodical fiber networks are considered to be formed by anisotropic spinodal decomposition. This effect can be used to measure the dispersion order of the polymer fibers. © 2004 The Optical Society of Japan     

A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.